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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A DESCRIPTION *With TO-220C package *Low collector saturation voltage *Excellent linearity of hFE *High collector current APPLICATIONS *For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Tc=25) SYMBOL PARAMETER 2SD866 VCBO Collector-base voltage 2SD866A 2SD866 VCEO Collector-emitter voltage 2SD866A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 100 7 7 15 40 150 -55~150 V A A W Open emitter 150 80 V CONDITIONS VALUE 130 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SD866 V(BR)CEO Collector-emitter breakdown voltage 2SD866A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=5 A;IB=0.25 A B 2SD866 2SD866A CONDITIONS MIN 80 TYP. MAX UNIT IC=0.2A; IB=0 100 0.5 1.5 10 50 45 60 30 260 V V V A A IC=5 A;IB=0.25 A B VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=0.5A ; VCE=10V MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;IB1=-IB2=0.3 A 0.5 1.5 0.1 s s s hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD866 2SD866A Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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